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Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207
Type: статьи в сборниках
Date: 2014
Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, O. I. |
Bonchyk, A. Yu. |
Savytskyy, H. V. |
Mynbaev, K. D. |
Varavin, V. S. |
Dvoretsky, Sergei A. |
Mikhailov, N. N. |
Voytsekhovskiy, Alexander V. |
Yakushev, M. V. |
Jakiela, R.
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description:
A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat
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Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170
Type: статьи в журналах
Date: 2017
Description:
Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons
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