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Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 246-247
Type: статьи в журналах
Date: 2012
Source: Известия высших учебных заведений. Физика. 2012. Т. 55, № 8/3. С. 269-270
Type: статьи в журналах
Date: 2012
Authors:
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Yakushev, Maxim V. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Marin, Denis V. |
Fitsych, Olena I. |
Kurbanov, Kurban R.
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description:
Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi
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Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1009-1011
Type: статьи в сборниках
Date: 2020
Description:
The features of the external photoelectric effect caused by soft x-ray radiation of a laser plasma source in CdxHg1-xTe solid solutions are considered. The possibility of a contribution from the ioniz
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Source: Opto-electronics review. 2014. Vol. 22, № 4. P. 236-244
Type: статьи в журналах
Date: 2014
Source: Physica status solidi C. 2016. Vol. 13, № 7/9. P. 647-650
Type: статьи в журналах
Date: 2016
Description:
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)-Hg0.78Cd0.22Te with insulator coating SiO2/Si3N4 and Al2O3 in the test signal frequency
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Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description:
Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Source: Journal of electronic materials. 2021. Vol. 50, № 4. P. 2323-2330
Type: статьи в журналах
Date: 2021
Description:
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdTe films grown by molecular beam epitaxy (MBE) on Si (310) substrates was experimentally studied. A s
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Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 353
Type: статьи в сборниках
Date: 2018
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description:
Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Source: Thin solid films. 2014. Vol. 551. P. 92-97
Type: статьи в журналах
Date: 2014
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 02001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructure
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Source: Thin solid films. 2012. Vol. 522. P. 261-266
Type: статьи в журналах
Date: 2012
Authors:
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I. |
Mynbaev, Karim D. |
Nesmelov, Sergey N. |
Dzyadukh, Stanislav M. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Korotaev, A. G. |
Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description:
Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Source: Journal of electronic materials. 2021. Vol. 50, № 8. P. 4599-4605
Type: статьи в журналах
Date: 2021
Description:
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the absorbing layer was 0.29, and in the barrier layer it
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