Электронная библиотека (репозиторий) Томского государственного университета
Voytsekhovskiy, Alexander V.

Add to Quick Collection   All 147 Results

Showing items 121 - 135 of 147.
Sort:
 Add All Items to Quick Collection
Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015. Lviv, 2015. P. 364
Type: статьи в сборниках
Date: 2015
Source: Infrared physics and technology. 2021. Vol. 114. P. 103665 (1-7)
Type: статьи в журналах
Date: 2021
Description: Carrier species in arsenic-implanted p– and n–type Hg0.7Cd0.3Te films grown by molecular-beam epitaxy were investigated with the use of the Hall-effect studies and mobility spectrum analysis. The impl ... More
Source: Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
Type: статьи в журналах
Date: 2022
Description: In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed sy ... More
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Source: Nanotechnology. 2018. Vol. 29, № 5. P. 054002 (1-7)
Type: статьи в журналах
Date: 2018
Description: In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with ... More
Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170
Type: статьи в журналах
Date: 2017
Description: Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons ... More
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533
Type: статьи в журналах
Date: 2020
Description: In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kineti ... More
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More
Source: Russian physics journal. 2023. Vol. 65, № 9. P. 1538-1554
Type: статьи в журналах
Date: 2023
Description: The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in ... More
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
Source: 17th International Conference on II-VI Compounds and Related Materials, Paris, 13-18 September 2015 : conference book. [S. l.], 2015. P. 345
Type: статьи в сборниках
Date: 2015
Source: Russian physics journal. 2022. Vol. 64, № 9. P. 1583-1591
Type: статьи в журналах
Date: 2022
Description: Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional cryst ... More
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
Source: XV International conference on physics and technology of thin films and nanosystems, Ivanо-Frankivsk, May, 11-16, 2015 : book of abstracts. Ivano-Frankivsk, 2015. P. 258
Type: статьи в сборниках
Date: 2015
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 89-90
Type: статьи в сборниках
Date: 2015

Date

^