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Source: 18th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices : proceedings, Erlagol, Altai Republic, 29 June - 3 July, 2017. Novosibirsk, 2017. P. 314-319
Type: статьи в сборниках
Date: 2017
Description:
Linear optical properties of vanadium (V) and nitrogen (N) doped single-crystal sub-millimeter wafers of 4H-S1C and 6H-S1C grown for industrial applications in optics and electronics are studied in de
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Source: The 24th Annual International Conference on Advanced Laser Technologies ALT'16, Galway, Ireland, September 12–16, 2016 : book of abstracts. [S. l.], 2016. P. [1]
Type: статьи в сборниках
Date: 2016
Authors:
Ezhov, Dmitry M. |
Turgeneva, Snezhana |
Nikolaev, Nazar A. |
Mamrashev, Alexander A. |
Mikerin, Sergei |
Minakov, Fedor |
Simanchuk, Andrey |
Antsygin, Valery D. |
Svetlichnyi, Valerii A. |
Losev, Valery F. |
Andreev, Yury M.
Source: Crystals. 2021. Vol. 11, № 11. P. 1321 (1-9)
Type: статьи в журналах
Date: 2021
Description:
Due to their high optical damage threshold, borate crystals can be used for the efficient nonlinear down-conversion of terawatt laser radiation into the terahertz (THz) frequency range of the electrom
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Source: Crystal research and technology. 2011. Vol. 46, № 4. P. 327-330
Type: статьи в журналах
Date: 2011
Source: Materials Chemistry and Physics. 2015. Vol. 154. P. 152-157
Type: статьи в журналах
Date: 2015
Authors:
Guo, Jin |
Zhang, Lai-Ming |
Li, Dian-Jun |
Yang, Gui-Long |
Chen, Fei |
Jiang, Ke |
Evdokimov, M. E. |
Nazarov, Maxim M. |
Andreev, Yury M. |
Lanskii, Grigory V. |
Kokh, Konstantin A. |
Kokh, A. E. |
Svetlichnyi, Valerii A. |
Xie, Ji-Jiang
Source: Optics Communications. 2013. Vol. 287. P. 145-149
Type: статьи в журналах
Date: 2013
Authors:
Xie, Ji-Jiang |
Zhang, Lai-Ming |
Li, Dian-Jun |
Yang, Gui-Long |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Shabalina, Anastasiia V. |
Shaiduko, Anna V. |
Svetlichnyi, Valerii A. |
Guo, Jin
Source: CrystEngComm. 2013. Vol. 15, № 32. P. 6323-6328
Type: статьи в журналах
Date: 2013
Authors:
Guo, Jin |
Xie, Ji-Jiang |
Zhang, Lai-Ming |
Gao, J.-Y. |
Andreev, Yury M. |
Izaak, Tatyana I. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Shaiduko, Anna V. |
Shabalina, Anastasiia V. |
Svetlichnyi, Valerii A. |
Feng, Z.-S.
Source: Optics Communications. 2014. Vol. 318. P. 205-211
Type: статьи в журналах
Date: 2014
Source: Journal of Siberian Federal University. Mathematics and Physics. 2022. Vol. 15, № 6. P. 724-729
Type: статьи в журналах
Date: 2022
Source: Proceedings of SPIE. 2018. Vol. 10614 : XIII International conference on atomic and molecular pulsed lasers, September 10-15, 2017, Tomsk, Russia. P. 1061424-1-1061424-6
Type: статьи в журналах
Date: 2018
Description:
We report results on comparative study of SHG in powder of promising nonlinear γ-Ga2S3 crystal. Digallium trisulfide powders with particle size from 20 μm to 500 μm were tested in comparison with powd
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description:
Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con
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Authors:
Chu, Wei-Chen |
Luo, Chih Wei |
Andreev, Yury M. |
Lanskii, Grigory V. |
Shaiduko, Anna V. |
Izaak, Tatyana I. |
Svetlichnyi, Valerii A. |
Wu, Kaung Hsiung |
Kobayashi, Takayoshi |
Ku, Shin An
Source: Optics Express. 2012. Vol. 20, № 5. С. 5029-5037
Type: статьи в журналах
Date: 2012
Source: Journal of materials science: materials in electronics. 2014. Vol. 25. P. 1757-1760
Type: статьи в журналах
Date: 2014
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101O-1-98101O-7
Type: статьи в журналах
Date: 2015
Description:
Double peak phase matching was recorded during experimental study of parametric frequency converters based on GaSe, its solid solutions crystals like GaSe1-xSx and ZnGeP2. Its physical origins are ide
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 981012-1-981012-10
Type: статьи в журналах
Date: 2015
Description:
Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-dop
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