Please be patient while the object screen loads.
Description | Size | Format | ||
---|---|---|---|---|
Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator | 254 KB | Adobe Acrobat PDF | View Details | Download |