Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

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Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1088/1742-6596/732/1/012036

Title: Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation
Creator: Takabayashi, Y.
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Bogdanov, O. V.
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Pivovarov, Yu. L.
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Tukhfatullin, T. A.
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Bagrov, Vladislav G.
Date: 2016
DOI: 10.1088/1742-6596/732/1/012036
Description: New experimental data on planar channeling of 255 MeV electrons in a 0.74 µm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.

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collection(s): Физический факультет
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в журналах
Source: Journal of Physics: Conference Series. 2016. Vol. 732. P. 012036 (1-8)
Language: rus

Created: 05-03-2018

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Физический факультет Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation