Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
- Title
- Version
- 1.5
- Pages
- 6
- Size
- 1 MB
- Producer
- ; modified using iText® 5.5.10 ©2000-2015 iText Group NV (AGPL-version)
Open in Browser
|
View Pdf in Internal Viewer
|
Download
1 MB