A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes

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2015

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A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes	2 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1134/S0020441215010236

Title: A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes
Creator: Ayzenshtat, G. I.
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Yushchenko, A. Yu.
Date: 2015
DOI: 10.1134/S0020441215010236
Description: It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active region. Based on this regularity, a method was developed that provides simple determination of the ambipolar-diffusion length and the carrier lifetime.