The peculiarities of halogens adsorption on A3B5(001) surface

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The peculiarities of halogens adsorption on A3B5(001) surface	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1088/1757-899X/77/1/012002

Title: The peculiarities of halogens adsorption on A3B5(001) surface
Creator: Bakulin, Alexander V.
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Tereshchenko, Oleg E.
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Shaposhnikov, Anton A.
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Smolin, Igor Yu.
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Kulkova, Svetlana E.
Date: 2015
DOI: 10.1088/1757-899X/77/1/012002
Description: Theoretical study of the F, Cl, Br, I adsorption on GaAs(001) surface is presented. The most stable configurations of halogens on Ga-rich ζ-(4×2) reconstruction are determined with increasing of adatoms concentration. The bonds weakening is found more significant for the F and Cl atoms which can induce stationary etching whereas I-induced changes in Ga-As binding energy is not sizable and its adsorption lead to the surface passivation.