In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si

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In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1186/s11671-015-1131-9

Title: In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si
Creator: Hasegawa, Mika
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Suto, Ryota
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Sambonsuge, Shota
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Teraoka, Yuden
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Akitaka, Yoshigoe
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Filimonov, Sergey N.
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Hirokazu, Fukidome
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Suemitsu, Maki
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Sugawara, Kenta
Date: 2015
DOI: 10.1186/s11671-015-1131-9
Description: Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni