Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation

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2015

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Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation	486 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1002/pssb.201451497

Title: Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation
Creator: Prudaev, Ilya A.
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Tolbanov, Oleg P.
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Kosobutsky, Alexey V.
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Sarkisov, Sergey Yu.
Contributor: Томский государственный университет Радиофизический факультет Научные подразделения РФФ
Date: 2015
DOI: 10.1002/pssb.201451497
Description: In this paper the results of experiments on terahertz generation from nitride light-emitting diode heterostructures under twophoton excitation by femtosecond laser pulses are reported. Dependencies of the photoluminescence and terahertz spectra on structural properties of the samples and intensity of laser pulses have been studied. It was found that the terahertz pulse amplitude increases and its spectrum shifts towards higher frequencies with an increasing number of quantum wells in the heterostructures. Photoluminescence spectral shape change at high excitation intensities was observed. The probable mechanisms explaining the observed experimental dependencies are discussed.

Created: 31-05-2016

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Радиофизический факультет Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation