Electron–phonon interaction in In-induced √7 ×√3 structures on Si(111) from first-principles

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DOI Доступ к ресурсу на сайте издателя			10.1039/d0cp05234e

Title: Electron–phonon interaction in In-induced √7 ×√3 structures on Si(111) from first-principles
Creator: Sklyadneva, Irina Yu.
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Heid, Rolf
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Echenique, Pedro Miguel
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Chulkov, Evgueni V.
Date: 2021
DOI: 10.1039/d0cp05234e
Description: Electron-phonon interaction in the Si(111)-supported rectangular phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer structures, it is found that the phonon-induced scattering of electrons is almost exclusively determined by vibrations of In atoms. It is shown that the strength of electron-phonon coupling at the Fermi level lambda(E-F) increases almost twofold upon adding the second In layer. One of the reasons is that additional low-frequency modes appear in the phonon spectrum, which favors a strong enhancement of lambda(E-F). The agreement of the calculated parameter lambda(E-F) = 0.99 for a double-layer structure as well as the superconducting transition temperature T-c = 3.5 K with experimental estimates indicates that the discovered superconducting phase is probably a double-layer rectangular -In structure on Si(111) with a coverage of 2.4 ML. This conclusion is also supported by good agreement between the calculated electron band structure and ARPES measurements.

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collection(s): Научное управление
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в журналах
Source: Physical chemistry chemical physics. 2021. Vol. 23, № 13. P. 7955-7960
Language: eng

Created: 24-05-2022

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Научное управление Electron–phonon interaction in In-induced √7 ×√3 structures on Si(111) from first-principles