The volumetric filamentous inclusions in ZnGeP2 were visualized by digital holography, their characteristic sizes were determined, and their location in the sample volume was determined. The chemical composition of filamentous bulk inclusions – Zn3P2 and Ge-was determined by X-ray diffraction analysis. The influence of the second-phase inclusions (Zn3P2 and Ge) on the quasi optical characteristics (refractive index and absorption coefficient) in the resonant absorption band (12–12.5 microns) is established. The presence of bulk inclusions in the ZnGeP2 single crystal leads to an increase in the reflection coefficient in the region of 12.5 microns. The dispersion dependences of the refractive index and the absorption coefficient of the studied ZnGeP2 samples at wavelengths of 300–1000 microns in the non fundamental absorption region were obtained. The obtained experimental results confirm the assumption of the determining role of free carriers in the formation of dielectric losses in the wavelength range of 100–1000 microns. The hypothesis that one of the main sources of free carriers in ZnGeP2 is the matrix medium / inclusion interface of the second phase is confirmed.
Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 114
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Digital holography methods for visualization and identification of ZnGeP2 bulk defects