On the method of photoconductive detection of defects in semiconductors by vibrational mode-related Fano resonances

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2018

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On the method of photoconductive detection of defects in semiconductors by vibrational mode-related Fano resonances	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1063/1.5037412

Title: On the method of photoconductive detection of defects in semiconductors by vibrational mode-related Fano resonances
Creator: Herklotz, F.
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Chaplygin, I.
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Lavrov, E. V.
Date: 2018
DOI: 10.1063/1.5037412
Description: The method of photoconductive detection of defect-related vibrational modes in semiconductors by Fano resonances is validated by a combined photoconductivity and infrared absorption study of the interstitial hydrogen donor in ZnO. Depth-resolved isotopic substitution experiments with varying concentrations of H and D show that the effect of vibrational mode-related absorption has to be taken into account in order to allow for an unambiguous interpretation of the experimental data. A quantitative model is presented which describes the influence of sample thickness, defect concentration, and the presence of other donors on the sign, magnitude, and shape of the Fano resonances. Implications for the photoconductive detection of defect-related vibrational modes are discussed

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collection(s): Сибирский физико-технический институт
Identifier: смотреть в электронном каталоге НБ ТГУ
Type: статьи в журналах
Source: Journal of applied physics. 2018. Vol. 124, № 2. P. 025704-1-025704-8
Language: eng

Created: 23-11-2021

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Сибирский физико-технический институт On the method of photoconductive detection of defects in semiconductors by vibrational mode-related Fano resonances