Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices

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Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1088/1742-6596/735/1/012012

Title: Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices
Creator: Dzyadukh, Stanislav M.
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Voytsekhovskiy, Alexander V.
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Gorn, Dmitriy Igorevich
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Nesmelov, Sergey N.
Date: 2016
DOI: 10.1088/1742-6596/735/1/012012
Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 to 200 K. It is shown that for structure with quantum well based on HgTe capacitance and conductance oscillations in the strong inversion are observed. Also it is assumed these oscillations are related with the recharging of quantum levels in HgTe.