Analysis of the nBn-type barrier structures for infrared photodiode detectors

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Analysis of the nBn-type barrier structures for infrared photodiode detectors	374 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1134/S1064226917030214

Title: Analysis of the nBn-type barrier structures for infrared photodiode detectors
Creator: Voytsekhovskiy, Alexander V.
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Gorn, Dmitriy Igorevich
Date: 2017
DOI: 10.1134/S1064226917030214
Description: Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.