Electronic and spin structure of a family of Sn-based ternary topological insulators

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DOI Доступ к ресурсу на сайте издателя			10.1103/PhysRevB.92.045134

Title: Electronic and spin structure of a family of Sn-based ternary topological insulators
Creator: Vergniory, M. G.
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Silkin, I. V.
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Koroteev, Yury M.
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Eremeev, Sergey V.
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Chulkov, Evgueni V.
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Menshchikova, Tatiana V.
Date: 2015
DOI: 10.1103/PhysRevB.92.045134
Description: We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX2Te4,SnX4Te7, and SnBi6Te10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.

Created: 21-06-2017

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Сибирский физико-технический институт Electronic and spin structure of a family of Sn-based ternary topological insulators