Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

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Maurin, I.

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Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications	1 MB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1063/1.4931944

Title: Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications
Creator: ereshchenko, Oleg E.
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Eremeev, Sergey V.
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Maurin, I.
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Bakulin, Alexander V.
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Kulkova, Svetlana E.
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Aksenov, Maxim S.
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Preobrazhenskii, V. V.
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Putyato, M. A.
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Semyagin, B. R.
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Golyashov, V. A.
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Dmitriev, D. V.
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Toropov, A. I.
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Gutakovskii, A. K.
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Khandarkhaeva, S. E.
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Prosvirin, I. P.
Date: 2015
DOI: 10.1063/1.4931944
Description: In this letter, we present electrical and magnetic characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs), along with the effect of pseudomorphic Si as a passivating interlayer on GaAs(001) grown by molecular beam epitaxy. Ultrathin HfO2 high-k gate dielectric films (3–15 nm) have been grown on Si/GaAs(001) structures through evaporation of a Hf/HfO2 target in NO2 gas. The lowest interface states density Dit at Au/HfO2/Si/GaAs(001) MOS-structures were obtained in the range of (6−13)×1011