Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films

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Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films	151 KB	Adobe Acrobat PDF	Read	Download
DOI Доступ к ресурсу на сайте издателя			10.1109/EFRE47760.2020.9241974

Title: Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films
Creator: Voytsekhovskiy, Alexander V.
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Korotaev, Alexander G.
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Izhnin, Igor I.
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Mynbaev, Karim D.
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Yakushev, Maxim V.
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Mikhailov, Nikolay N.
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Varavin, Vasilii S.
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Dvoretsky, Sergei A.
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Marin, Denis V.
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Fitsych, Olena I.
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Kurbanov, Kurban R.
Date: 2020
DOI: 10.1109/EFRE47760.2020.9241974
Description: Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode ‘base’ layers in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was established and tentatively explained.