https://vital.lib.tsu.ru/vital/access/manager/Index ${session.getAttribute("locale")} 5 Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000635227 Wed 31 Oct 2018 16:49:20 KRAT ]]> Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000720871 Wed 27 May 2020 19:57:02 KRAT ]]> Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583079 Wed 18 Oct 2017 10:20:24 KRAT ]]> Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000626219 Wed 16 May 2018 10:22:27 KRAT ]]> Electrophysical characteristics of metal-insulator-semiconductor structures comprising CdHgTe-based quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000493287 Wed 12 Dec 2018 19:24:12 KRAT ]]> Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000539842 Wed 05 Dec 2018 10:15:23 KRAT ]]> Description of electrophysical characteristics for MIS-structures with CdHgTe-based quantum wells under the 8–300 K https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000477954 Wed 04 Sep 2019 13:02:54 KRAT ]]> Admittance measurements in the temperature range (8-77) K for characterization of MIS structures based on MBE n-Hg0.78Cd0.22Te with and without graded-gap layers https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577239 Tue 13 Jun 2017 15:34:11 KRAT ]]> Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577240 Tue 13 Jun 2017 15:20:09 KRAT ]]> Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794654 Tue 09 Mar 2021 13:25:41 KRAT ]]> Admittance investigation of MIS structures with GgTe-based single quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583388 Thu 26 Oct 2017 11:04:48 KRAT ]]> Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583387 Thu 26 Oct 2017 11:04:46 KRAT ]]> Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583386 Thu 26 Oct 2017 11:04:39 KRAT ]]> Electro-physical characteristics of MIS structures with HgTe-based single quantum wells for optoelectronics devices https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622054 Thu 22 Mar 2018 09:48:18 KRAT ]]> Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794304 Thu 18 Mar 2021 13:33:42 KRAT ]]> Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1–xCdxTe in wide temperature range https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000493187 Thu 13 Dec 2018 10:31:55 KRAT ]]> Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000537300 Sat 06 May 2017 09:37:28 KRAT ]]> Admittance of HgCdTe MIS structures with HgTe single quantum well https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000529825 Mon 24 Apr 2017 10:14:57 KRAT ]]> Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000795379 Mon 22 Mar 2021 10:04:58 KRAT ]]> Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000548081 Mon 19 Mar 2018 12:37:29 KRAT ]]> Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016965 Mon 15 Jan 2024 11:16:56 KRAT ]]> Electro-physical characteristics of MIS structures with HgTe-based single quantum wells https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000552778 Mon 03 Dec 2018 15:39:38 KRAT ]]> Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000525996 Mon 02 Apr 2018 09:56:06 KRAT ]]> Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000519407 Mon 02 Apr 2018 09:55:59 KRAT ]]> Investigation of the effect of soft X-ray radiation on the electrophysical characteristics of epitaxial layers n-Hg1-xCdxTe https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000659458 Mon 01 Jul 2019 10:38:29 KRAT ]]> Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673793 Fri 24 Jan 2020 09:41:19 KRAT ]]> Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000707751 Fri 20 Mar 2020 15:13:07 KRAT ]]> Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893729 Fri 13 May 2022 10:08:43 KRAT ]]> The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893727 Fri 13 May 2022 10:08:43 KRAT ]]> Admittance of pentacene-based MIS-structures with two-layer insulator SiO2-Al2O3 https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893722 Fri 13 May 2022 10:01:47 KRAT ]]> Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893726 Fri 13 May 2022 10:01:30 KRAT ]]> Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000893721 Fri 13 May 2022 10:01:28 KRAT ]]> Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789380 Fri 11 Dec 2020 10:08:03 KRAT ]]> Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation https://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000788894 Fri 04 Dec 2020 09:39:58 KRAT ]]>