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Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description:
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil
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Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Type: статьи в журналах
Date: 2015
Description:
In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically d
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Source: Physical Review B. 2015. Vol. 92, № 16. P. 165309-1-165309-9
Type: статьи в журналах
Date: 2015
Description:
We propose a way to break the time-reversal symmetry at the surface of a three-dimensional topological insulator that combines features of both surface magnetic doping and magnetic proximity effect. B
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Source: Physical Review B. 2015. Vol. 91, № 8. P. 081201-1-081201-6
Type: статьи в журналах
Date: 2015
Description:
A strong spin-orbit interaction leads to a Rashba-type splitting of the bulk bands of BiTeCl, which results in toroidal Fermi surfaces with distinct spin structures depending on the chemical potential
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Source: Nature communications. 2015. Vol. 6, Art. № 8691. P. 1-6-
Type: статьи в журналах
Date: 2015
Description:
Quantum interference is a striking manifestation of one of the basic concepts of quantum mechanics: the particle-wave duality. A spectacular visualization of this effect is the standing wave pattern p
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Source: Physical Review B. 2015. Vol. 92, № 4. P. 045134-1-045134-7
Type: статьи в журналах
Date: 2015
Description:
We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the fram
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Authors:
Usachov, Dmitry Yu. |
Petukhov, Anatoly E. |
Vilkov, Oleg Yu. |
Rybkin, Artem G. |
Otrokov, Mikhail M. |
Arnau, Andrés |
Chulkov, Evgueni V. |
Yashina, Lada V. |
Farjam, Mani |
Fedorov, Alexander V. |
Adamchuk, Vera K. |
Senkovskiy, Boris V. |
Laubschat, Clemens |
Vyalikh, Denis V.
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description:
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e
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Authors:
Politano, Antonio |
Nechaev, Ilya A. |
Vitiello, Miriam S. |
Viti, Leonardo |
Aliev, Ziya S. |
Babanly, Mahammad B. |
Chiarello, G. |
Echenique, Pedro Miguel |
Chulkov, Evgueni V. |
Silkin, V. M.
Source: Physical Review Letters. 2015. Vol. 115, № 21. P. 216802-1-216802-5
Type: статьи в журналах
Date: 2015
Description:
We have investigated plasmonic excitations at the surface of Bi2Se3(0001) via high-resolution electron energy loss spectroscopy. For low parallel momentum transfer q∥, the loss spectrum shows a distin
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Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 5. P. 055501 (1-11)
Type: статьи в журналах
Date: 2015
Description:
Modifications in dielectric properties of palladium upon absorption of hydrogen are investigated theoretically in the low-energy (0–2 eV) region. The calculations were performed with full inclusion of
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Source: Scientific Reports [Еlectronic resource]. 2015. Vol. 5. P. 12819 (1-8)
Type: статьи в журналах
Date: 2015
Description:
Intriguing phenomena and novel physics predicted for two-dimensional (2D) systems formed by electrons in Dirac or Rashba states motivate an active search for new materials or combinations of the alrea
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Authors:
Usachov, Dmitry Yu. |
Gruneis, Alexander |
Laubschat, Clemens |
Vyalikh, Denis V. |
Otrokov, Mikhail M. |
Chikina, Alla |
Vilkov, Oleg Yu. |
Petukhov, Anatoly E. |
Rybkin, Artem G. |
Koroteev, Yury M. |
Chulkov, Evgueni V. |
Adamchuk, Vera K. |
Fedorov, Alexander V.
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description:
With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom
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Authors:
Nechaev, Ilya A. |
De Renzi, V. |
di Bona, A. |
Lodi Rizzini, A. |
Mio, A. M. |
Nicotra, G. |
Politano, Antonio |
Scalese, S. |
Aliev, Ziya S. |
Aguilera, I. |
Babanly, Mahammad B. |
Blügel, S. |
Friedrich, C. |
Chulkov, Evgueni V.
Source: Physical Review B. 2015. Vol. 91, № 24. P. 245123-1-245123-8
Type: статьи в журналах
Date: 2015
Description:
We report first-principles GW results on the dispersion of the bulk band-gap edges in the three-dimensional topological insulator Sb2Te3. We find that, independently of the reference density-functiona
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Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 2. P. 025801 (1-8)
Type: статьи в журналах
Date: 2015
Description:
The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show
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Source: Journal of experimental and theoretical physics letters. 2015. Vol. 102, № 11. P. 754-759
Type: статьи в журналах
Date: 2015
Description:
In the framework of an effective functional approach based on the k · p method, we study the combined effect of an interface potential and a thickness of a three-dimensional (3D) topological insulator
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Source: Physical Review B. 2015. Vol. 91, № 24. P. 245145-1-245145-5
Type: статьи в журналах
Date: 2015
Description:
An exotic type of topological spin-helical surface state was found in layered van der Waals bonded (SnTe)n=2,3(Bi2Te3)m=1 compounds which comprise two covalently bonded band inverted sublattices, SnTe
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