Электронная библиотека (репозиторий) Томского государственного университета
2020

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Source: Прикладная дискретная математика. 2020. № 47. С. 16-21
Type: статьи в журналах
Date: 2020
Description: Let F be a quadratic APN function in n variables. The associated Boolean function yf in 2n variables (yF(a, b) = 1 if a = 0 and equation F(x) + F(x + a) = b has solutions) has the form yF(a, b) = Ф,р( ... More
Source: Geosciences. 2020. Vol. 10, № 1. P. 16 (1-74)
Type: статьи в журналах
Date: 2020
Description: All 142 known species of Curculionoidea in Eocene amber are documented, including
Source: Journal of structural chemistry. 2020. Vol. 61, № 2. P. 316-329
Type: статьи в журналах
Date: 2020
Description: Pulsed laser ablation (PLA) in liquids is an effective high-energy method for the synthesis of functional nanomaterials. In the present work, a nanocomposite catalyst Pt/Al2O3(PLA) is prepared by mixi ... More
Source: GOL'20 : 2020 5th International conference on logistics operations management (GOL), October, 28-30, 2020, virtual : proceedings. [S. l.], 2020. P. 79-84
Type: статьи в сборниках
Date: 2020
Description: This work proposes an ABC-XYZ-type analysis modified with observed merchandise deficit. The deficit is determined by right censoring. This manuscript proposes to account for right censoring in the ABC ... More
Source: GOL'20 : proceedings of the 5th IEEE International conference on logistics operations management, ENSIAS, Rabat, Maroc, October 28-30, 2020 : abstracts. [S. l.], 2020. P. 31
Type: статьи в сборниках
Date: 2020
Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstracts. Tomsk, 2020. P. 460
Type: статьи в сборниках
Date: 2020
Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description: Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi ... More
Source: Science of the total environment. 2020. Vol. 712. P. 135595 (1-12)
Type: статьи в журналах
Date: 2020
Description: In Southern Europe, soil contamination by heavy metals (HM) due to mining and industrial activities is a longknown
Source: Journal of insect biodiversity. 2020. Vol. 14, № 1. P. 1-5
Type: статьи в журналах
Date: 2020
Description: A new genus, Acroapalochrus gen. nov., is described in the tribe Apalochrini with the type species Apalochrus sulcaticornis Pic, 1942. Amongst representatives of the tribe, the new genus differs in sp ... More
Source: Вестник Томского государственного университета. Управление, вычислительная техника и информатика. 2020. № 50. С. 61-68
Type: статьи в журналах
Date: 2020
Description: The procedure of active parametrical identification of stochastic linear continuous-discrete systems including robust estimation of parameters and optimal design of input signals is offered. A general ... More
Source: 2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM). [S. l.], 2020. P. 128-133
Type: статьи в сборниках
Date: 2020
Description: The paper discusses the possibilities of using 3Dprinting technology to create radar absorbing coatings and elements of electronic equipment. The frequency dependences of the relative changes in the d ... More
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract book. Kyiv, 2020. P. 418
Type: статьи в сборниках
Date: 2020
Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
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