Электронная библиотека (репозиторий) Томского государственного университета
электронная структура | Chulkov, Evgueni V.

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Source: Physical Review B. 2017. Vol. 95, № 20. P. 205429-1-205429-9
Type: статьи в журналах
Date: 2017
Description: Using surface x-ray diffraction and scanning tunneling microscopy in combination with first-principles calculations, we have studied the geometric and electronic structure of Cs-deposited Bi2Se3(0001) ... More
Source: Nano letters. 2016. Vol. 16, № 7. P. 4535-4543
Type: статьи в журналах
Date: 2016
Description: The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reprodu ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description: Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho ... More
Source: Physical Review B. 2015. Vol. 91. P. 205430-1-205430-7
Type: статьи в журналах
Date: 2015
Description: A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bil ... More
Source: ACS Nano. 2015. Vol. 9. P. 7314-7322
Type: статьи в журналах
Date: 2015
Description: Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an e ... More
Source: Nano letters. 2015. Vol. 15, № 4. P. 2396-2401
Type: статьи в журналах
Date: 2015
Description: With the discovery and first characterization of graphene, its potential for spintronic applications was recognized immediately. Since then, an active field of research has developed trying to overcom ... More
Source: Journal of Electron Spectroscopy and Related Phenomena. 2014. Vol. 195. P. 278-284
Type: статьи в журналах
Date: 2014
Source: Nano letters. 2013. Vol. 13. P. 6064-6069
Type: статьи в журналах
Date: 2013
Description: ABSTRACT: The ability to engineer an electronic band
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