Электронная библиотека (репозиторий) Томского государственного университета
гетероструктуры | Chulkov, Evgueni V.

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Source: Journal of magnetism and magnetic materials. 2018. Vol. 459. P. 231-235
Type: статьи в журналах
Date: 2018
Description: We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interfac ... More
Source: Journal of experimental and theoretical physics letters. 2015. Vol. 102, № 11. P. 754-759
Type: статьи в журналах
Date: 2015
Description: In the framework of an effective functional approach based on the k · p method, we study the combined effect of an interface potential and a thickness of a three-dimensional (3D) topological insulator ... More
Source: Nano letters. 2013. Vol. 13. P. 6064-6069
Type: статьи в журналах
Date: 2013
Description: ABSTRACT: The ability to engineer an electronic band
Source: Physical Review B. 2013. Vol. 88, № 4. P. 144430-1-144430-5
Type: статьи в журналах
Date: 2013
Source: Physical Review B. 2013. Vol. 88, № 22. P. 224401-1-224401-8
Type: статьи в журналах
Date: 2013
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