Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.

Source: Russian physics journal. 2015. Vol. 58, № 7. P. 970-977

Type: статьи в журналах

Date: 2015

Description: The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencie ... More

Authors: Dzyadukh, Stanislav M. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.

Source: Journal of Physics: Conference Series. 2015. Vol. 661. P. 012032 (1-6)

Type: статьи в журналах

Date: 2015

Description: The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/ ... More

Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Grigoryev, Denis V. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Nesmelov, Sergey N.

Source: Journal of Physics: Conference Series. 2015. Vol. 652. P. 012003 (1-4)

Type: статьи в журналах

Date: 2015

Description: This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structur ... More