Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, Olena I. | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A. | Mynbaev, Karim D.

Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207

Type: статьи в журналах

Date: 2015

Description: Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto ... More

Authors: Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mohylyak, I. A.

Source: XV International conference on physics and technology of thin films and nanosystems, Ivanо-Frankivsk, May, 11-16, 2015 : book of abstracts. Ivano-Frankivsk, 2015. P. 258

Type: статьи в сборниках

Date: 2015

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, G. V. | Mynbaev, Karim D. | Fitsych, Olena I.

Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165

Type: статьи в журналах

Date: 2015

Description: Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri ... More