Электронная библиотека (репозиторий) Томского государственного университета

This page is only showing items within the active collection. You can remove the filter by clicking here.

Your search on produced these results.

Add to Quick Collection   All 2783 Results

Showing items 1 - 15 of 2783.
Sort:
 Add All Items to Quick Collection
Source: Quantum electronics. 2019. Vol. 49, № 9. P. 881-886
Type: статьи в журналах
Date: 2019
Description: Measuring the concentration of methane in the atmosphere is demonstrated to be very important, since an increase in methane content enhances the greenhouse effect. It is shown that the error in assess ... More
Source: AIP Conference Proceedings. 2019. Vol. 2069. P. 040007-1-040007-8
Type: статьи в журналах
Date: 2019
Description: In our paper we report about the optical properties of diamonds having applied sense. Radiation destruction manifests itself in the form of absorption bands and luminescence of vacancies and interstit ... More
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More
Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t ... More
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 5. P. P05020 (1-17)
Type: статьи в журналах
Date: 2019
Description: Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise me ... More
Source: Laser physics letters. 2019. Vol. 16, № 6. P. 066001 (1-8)
Type: статьи в журналах
Date: 2019
Description: In the article, new Dunham coefficients of the CO molecule in the X1Σ+ state are determined on the basis of the energy data for high vibrational–rotational levels. A comparison of the predicted values ... More
Source: Plasma science and technology. 2019. Vol. 21, № 4. P. 044007 (1-9)
Type: статьи в журналах
Date: 2019
Description: The effect of air pressure (12.5, 25, 50, and 100 kPa) on the generation of runaway electron beams in a non-uniform electric field when applying voltage pulses (≈35 kV) with a rise time of ≈200 ns has ... More
Source: Technical physics. 2019. Vol. 64, № 8. P. 1200-1204
Type: статьи в журналах
Date: 2019
Description: Parameters of a beam of runaway electrons and X-ray radiation generated in a gas diode at different atmospheric pressures are studied. It is shown that the maximum beam currents and intensities of X-r ... More
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description: Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op ... More
Source: Optics Communications. 2019. Vol. 430. P. 210-218
Type: статьи в журналах
Date: 2019
Description: Laser action on C3Πu → B3 Π g transition of nitrogen pumped by a runaway electron preionized discharge (REP DD) was investigated. Emission parameters of diffuse discharge formed by runaway electrons i ... More
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More
Source: Infrared physics and technology. 2019. Vol. 102. P. 103035 (1-4)
Type: статьи в журналах
Date: 2019
Description: The unipolar MWIR nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (0 1 3) substrates were created. The CdTe content in the barrier layer varied from 0.67 to 0.84 for various sam ... More
Source: Journal of applied physics. 2019. Vol. 125, № 14. P. 143301-1-143301-7
Type: статьи в журналах
Date: 2019
Description: The streamer formation in a point-to-plane gap filled with atmospheric-pressure air has been experimentally studied using a streak camera and a four-channel intensified charge-coupled device camera wi ... More
Source: Physics letters A. 2019. Vol. 383, № 4. P. 351-357
Type: статьи в журналах
Date: 2019
Description: The formation of periodic plasma clots which form a discharge channel similar to bead lightning has been studied with a four-channel intensified charge-coupled device (ICCD) camera simultaneously with ... More
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More

Date

^