Электронная библиотека (репозиторий) Томского государственного университета

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Source: Plasma physics reports. 2018. Vol. 44, № 1. P. 153-156
Type: статьи в журналах
Date: 2018
Description: In a single-barrier discharge with voltage sharpening and low gas consumption (up to 1 L/min), plane atmospheric pressure plasma jets with a width of up to 3 cm and length of up to 4 cm in air are for ... More
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1853-1863
Type: статьи в журналах
Date: 2018
Description: Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe laye ... More
Source: Proceedings of SPIE. 2018. Vol. 10614 : XIII International conference on atomic and molecular pulsed lasers, September 10-15, 2017, Tomsk, Russia. P. 1061403-1-1061403-7
Type: статьи в журналах
Date: 2018
Description: We describe experiments on the excitation of amplified spontaneous emission on the D-lines of sodium (D2 = 588.9 nm; D1 = 589.6 nm) with longitudinal optical pumping with a large detuning from the D2 ... More
Source: Semiconductor science and technology. 2018. Vol. 33, № 6. P. 065009 (1-8)
Type: статьи в журналах
Date: 2018
Description: The results of studying the annealing kinetics of the radiation-induced donor-type defects in boron implanted p-type Hg1−x Cd x Te (MCT) are presented. The annealing kinetics of the radiation donor ce ... More
Source: Physics of plasmas. 2018. Vol. 25, № 8. P. 083513-1-083513-6
Type: статьи в журналах
Date: 2018
Description: New experimental and computational data on apokamps produced by repetitive discharges in air, including a detailed description of the research techniques used, are presented. It has been shown that pl ... More
Source: Nanotechnology. 2018. Vol. 29, № 5. P. 054002 (1-7)
Type: статьи в журналах
Date: 2018
Description: In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with ... More
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
Source: Semiconductors. 2018. Vol. 52, № 2. P. 143-149
Type: статьи в журналах
Date: 2018
Description: The effect of annealing in argon at temperatures of Tan = 700–900°C on the I–V characteristics of metal–Ga2O3–GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga2O3 p ... More
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Source: Physics of plasmas. 2018. Vol. 25, № 8. P. 083511-1-083511-7
Type: статьи в журналах
Date: 2018
Description: This paper presents experimental data on the dynamics of positive streamers formation in a highly inhomogeneous electric field under threshold for the breakdown of the gap conditions as well as at hig ... More
Source: Physica status solidi A : applications and materials science. 2018. Vol. 215, № 8. P. 1700445 (1-5)
Type: статьи в журналах
Date: 2018
Description: Red and yellow AlGaInP/GaAs light‐emitting diodes (LEDs) with multiple quantum wells grown by the metalorganic chemical vapor deposition technique were irradiated at room temperature by 10 MeV electro ... More
Source: Proceedings of SPIE. 2018. Vol. 10614 : XIII International conference on atomic and molecular pulsed lasers, September 10-15, 2017, Tomsk, Russia. P. 106141H-1-106141H-9
Type: статьи в журналах
Date: 2018
Description: The study of optical absorption of CVD diamond near the fundamental absorption edge was performed in the temperature range of 87-296 K. At temperatures lower than 195 K the absorption was practically ... More
Source: Journal of instrumentation : electronic journal. 2018. Vol. 13, № 1. P. C01030 (1-7)
Type: статьи в журналах
Date: 2018
Description: The investigation results of GaAs:Cr X-ray sensor noise characteristics are presented. Measured samples were 3*3 mm2 and thickness in the range of 300–500 μm. It is shown that the proposed method can ... More
Authors: Kuznetsov, Denis
Source: MATEC Web of conferences. 2018. Vol. 155. P. 01018 (1-4)
Type: статьи в журналах
Date: 2018
Description: Biometric technologies are based on biometrics, measurement of the unique characteristics of a certain person. These are the unique signs received by a person from birth and acquired characteristics t ... More

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