Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | Tyazhev, Anton V.

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Add   The fractional composition calculation of two-component mixtures using direct and scattered X-rays: a new methodology testing
Authors: Badazhkov, D. | Usov, E. | Tyazhev, Anton V. | Serdyuk, D. | Tailakov, D. O. | Ulyanov, V. N. | Vinnik, A. E. | Skakunov, M. S. | Shaimerdenova, Leyla K. | Tolbanov, Oleg P. | Mashnin, A. | Spirin, A. | Stenin, V. | Alekseev, I.
Source: Journal of instrumentation : electronic journal. 2023. Vol. 18, № 1. P. P01042
Type: статьи в журналах
Date: 2023
Description: Continuous monitoring and control of hydrocarbon flow is not a new task. Today, there are many engineering solutions in flow measurement that are used in commercial applications. However, the search f ... More
Add   Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology
Authors: Veale, Matthew C. | Booker, P. | Church, I. | Jones, L. L. | Lipp, J. | Schneider, Andreas | Seller, Paul H. | Wilson, Matthew D. | Chsherbakov, Ivan | Kolesnikova, Irina I. | Lozinskaya, Anastassiya D. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2022. Vol. 1025. P. 166083 (1-9)
Type: статьи в журналах
Date: 2022
Description: In this paper a new version of the HEXITEC spectroscopic imaging technology is presented. The HEXITEC ASIC maintains the same pixel electronics but, unlike the previous design, contains no I/O pads on ... More
Add   High-spatial resolution measurements with a GaAs:Cr sensor using the charge integrating MÖNCH detector with a pixel pitch of 25 μm
Authors: Chiriotti, Sabina | Barten, Rebecca | Bergamaschi, Anna | Carulla, M. | Chsherbakov, Ivan | Dinapoli, Roberto | Fröjdh, Erik | Greiffenberg, Dominic | Hasanaj, Shqipe | Hinger, V. | King, T. | Kozlowski, Pawel | López-Cuenca, Carlos | Lozinskaya, Anastassiya D. | Marone, F. | Mezza, Davide | Moustakas, K. | Mozzanica, Aldo | Ruder, Christian | Schmitt, Bernd | Thattil, Dhanya | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N. | Zhang, J. | Brückner, Martin
Source: Journal of instrumentation : electronic journal. 2022. Vol. 17, № 4. P. P04007 (1-17)
Type: статьи в журналах
Date: 2022
Description: The aim of this project is to determine the imaging capabilities of a 25 μ m pixel pitch GaAs:Cr sensor of 500 μm thickness bump-bonded to the charge integrating MÖNCH 03 readout chip (also called GaA ... More
Add   Characterization of chromium compensated gaas sensors with the charge-integrating JUNGFRAU readout chip by means of a highly collimated pencil beam
Authors: Greiffenberg, Dominic | Andrä, Marie | Barten, Rebecca | Bergamaschi, Anna | Brückner, Martin | Busca, Paolo | Chiriotti, Sabina | Chsherbakov, Ivan | Dinapoli, Roberto | Fajardo, Pablo | Fröjdh, Erik | Hasanaj, Shqipe | Kozlowski, Pawel | López-Cuenca, Carlos | Lozinskaya, Anastassiya D. | Meyer, Markus | Mezza, Davide | Mozzanica, Aldo | Redford, Sophie | Ruat, Marie | Ruder, Christian | Schmitt, Bernd | Thattil, Dhanya | Tinti, Gemma | Tolbanov, Oleg P. | Tyazhev, Anton V. | Vetter, Seraphin | Zarubin, Andrei N. | Zhang, Jiaguo
Source: Sensors. 2021. Vol. 21, № 4. P. 1550 (1-22)
Type: статьи в журналах
Date: 2021
Description: Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × ... More
Add   Conceptual design report for the LUXE experiment
Authors: Abramowicz, H. | Acosta, U. | Altarelli, M. | Aßmann, R. | Bai, Z. | Behnke, T. | Benhammou, Y. | Blackburn, T. | Boogert, S. | Borysov, O. | Borysova, M. | Brinkmann, R. | Bruschi, M. | Burkart, F. | Büßer, K. | Shaimerdenova, L. | Skakunov, M. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: The European physical journal: Special topics. 2021. Vol. 230, № 11. P. 2445-2560
Type: статьи в журналах
Date: 2021
Description: This Conceptual Design Report describes LUXE (Laser Und XFEL Experiment), an experimental campaign that aims to combine the high-quality and high-energy electron beam of the European XFEL with a power ... More
Add   Effect of gallium arsenide charge carrier life time on the generation and detection efficiency of continuous and pulsed terahertz radiation
Authors: Kobtsev, Daniil A. | Tyazhev, Anton V. | Kolesnikova, Irina I. | Redkin, Ruslan A.
Source: Russian physics journal. 2021. Vol. 63, № 11. P. 1997-2003
Type: статьи в журналах
Date: 2021
Description: A configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT-GaAs for generation and detection of terahertz radiation are developed. Their operating characteristics i ... More
Add   Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr
Authors: Lozinskaya, Anastassiya D. | Veale, Matthew C. | Kolesnikova, Irina I. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Wheater, R. M. | Zarubin, Andrei N.
Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 2. P. P02026 (1-8)
Type: статьи в журналах
Date: 2021
Description: HR GaAs:Cr is a well known material, used for room-temperature X-ray detector applications. While GaAs:Cr detectors have typically shown good performance at 25oC, there may be benefits of running the ... More
Add   Measurement of the radiation environment of the ATLAS cavern in 2017–2018 with ATLAS-GaAsPix detectors
Authors: Boyko, I. | Burian, P. | Campbell, M. | Chelkov, G. A. | Cherepanova, E. | Di Girolamo, B. | Gongadze, A. | Janecek, J. | Kharchenko, D. | Kruchonak, U. G. | Lapkin, A. | Mora Sierra, Y. | Nessi, M. | Pontecorvo, L. | Pospisil, S. | Rastorguev, D. | Rozhkov, V. | Smolyanskiy, P. I. | Suk, M. | Stekl, I. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 1. P. P01031 (1-13)
Type: статьи в журналах
Date: 2021
Description: A network of ten GaAs:Cr semiconductor Timepix detectors with GaAs:Cr sensors was installed in the ATLAS cavern at CERN's LHC during the shutdown periods 2015–2016 and 2016–2017 in the framework of a ... More
Add   Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes
Authors: Kolesnikova, Irina I. | Kobtsev, Daniil A. | Redkin, Ruslan A. | Voevodin, Vladimir I. | Tyazhev, Anton V. | Tolbanov, Oleg P. | Sarkisov, Yuri S. | Sarkisov, Sergey Yu. | Atuchin, Victor V.
Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description: The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c ... More
Add   X-ray microbeam characterisation of crystalline defects in small pixel GaAs:Cr detectors
Authors: Wheater, R. M. | Jowitt, L. | Zarubin, A. N. | Richards, S. | Veale, Matthew C. | Wilson, Matthew D. | Fox, O. J. L. | Sawhney, K. J. S. | Lozinskaya, A. D. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2021. Vol. 999. P. 165207 (1-7)
Type: статьи в журналах
Date: 2021
Description: A newly supplied 80 × 80 chromium compensated GaAs sensor with a matrix of 80 × 80 pixels on a 250 m pixel pitch has been characterised utilising microbeam mapping techniques at the Diamond Light Sour ... More
Add   Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip
Authors: Andrä, M. | Barten, R. | Busca, P. | Brückner, M. | Chiriotti Alvarez, S. | Chsherbakov, I. | Dinapoli, R. | Fajardo, P. | Lopez-Cuenca, C. | Lozinskaya, A. D. | Meyer, M. | Mezza, D. | Mozzanica, A. | Redford, S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Greiffenberg, D. | Fröjdh, E. | Bergamaschi, A.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 5. P. P05020 (1-17)
Type: статьи в журналах
Date: 2019
Description: Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise me ... More
Add   The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics
Authors: Chsherbakov, P. | Kolesnikova, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Chsherbakov, I.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 1. P. C01026 (1-7)
Type: статьи в журналах
Date: 2019
Description: In this research the HR-GaAs:Cr sensors noise characteristics were investigated by means of amplitude spectrum analysis. Noise characteristics of HR-GaAs:Cr sensors with different metal contacts were ... More
Add   GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis
Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, V. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.
Source: Journal of instrumentation : electronic journal. 2018. Vol. 13, № 1. P. C01030 (1-7)
Type: статьи в журналах
Date: 2018
Description: The investigation results of GaAs:Cr X-ray sensor noise characteristics are presented. Measured samples were 3*3 mm2 and thickness in the range of 300–500 μm. It is shown that the proposed method can ... More
Add   Properties of gallium oxide films obtained by HF-magnetron sputtering
Authors: Kalygina, V. M. | Novikov, Vadim A. | Prudaev, Ilya A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Lygdenova, T. Z.
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1911-1916
Type: статьи в журналах
Date: 2018
Description: The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the ... More
Add   Characterization of 4 inch GaAs:Cr wafers
Authors: Budnitsky, D. | Lozinskaya, A. D. | Kolesnikova, I. | Zarubin, A. N. | Shemeryankina, A. | Mikhailov, T. | Skakunov, M. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Novikov, Vladimir A.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
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