Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | Tolbanov, Oleg P.

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Add   The fractional composition calculation of two-component mixtures using direct and scattered X-rays: a new methodology testing
Authors: Badazhkov, D. | Usov, E. | Tyazhev, Anton V. | Serdyuk, D. | Tailakov, D. O. | Ulyanov, V. N. | Vinnik, A. E. | Skakunov, M. S. | Shaimerdenova, Leyla K. | Tolbanov, Oleg P. | Mashnin, A. | Spirin, A. | Stenin, V. | Alekseev, I.
Source: Journal of instrumentation : electronic journal. 2023. Vol. 18, № 1. P. P01042
Type: статьи в журналах
Date: 2023
Description: Continuous monitoring and control of hydrocarbon flow is not a new task. Today, there are many engineering solutions in flow measurement that are used in commercial applications. However, the search f ... More
Add   Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology
Authors: Veale, Matthew C. | Booker, P. | Church, I. | Jones, L. L. | Lipp, J. | Schneider, Andreas | Seller, Paul H. | Wilson, Matthew D. | Chsherbakov, Ivan | Kolesnikova, Irina I. | Lozinskaya, Anastassiya D. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2022. Vol. 1025. P. 166083 (1-9)
Type: статьи в журналах
Date: 2022
Description: In this paper a new version of the HEXITEC spectroscopic imaging technology is presented. The HEXITEC ASIC maintains the same pixel electronics but, unlike the previous design, contains no I/O pads on ... More
Add   Formation of dislocations in the process of impurity diffusion in GaAs
Authors: Khludkov, Stanislav S. | Prudaev, Ilya A. | Tolbanov, Oleg P. | Ivonin, Ivan V.
Source: Russian physics journal. 2022. Vol. 64, № 12. P. 2350-2356
Type: статьи в журналах
Date: 2022
Description: A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion layers doped with various impurities (elemen ... More
Add   High-spatial resolution measurements with a GaAs:Cr sensor using the charge integrating MÖNCH detector with a pixel pitch of 25 μm
Authors: Chiriotti, Sabina | Barten, Rebecca | Bergamaschi, Anna | Carulla, M. | Chsherbakov, Ivan | Dinapoli, Roberto | Fröjdh, Erik | Greiffenberg, Dominic | Hasanaj, Shqipe | Hinger, V. | King, T. | Kozlowski, Pawel | López-Cuenca, Carlos | Lozinskaya, Anastassiya D. | Marone, F. | Mezza, Davide | Moustakas, K. | Mozzanica, Aldo | Ruder, Christian | Schmitt, Bernd | Thattil, Dhanya | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N. | Zhang, J. | Brückner, Martin
Source: Journal of instrumentation : electronic journal. 2022. Vol. 17, № 4. P. P04007 (1-17)
Type: статьи в журналах
Date: 2022
Description: The aim of this project is to determine the imaging capabilities of a 25 μ m pixel pitch GaAs:Cr sensor of 500 μm thickness bump-bonded to the charge integrating MÖNCH 03 readout chip (also called GaA ... More
Add   Manufacturing and properties of ferromagnetic aluminum nitride doped with nonmagnetic impurities
Authors: Khludkov, Stanislav S. | Prudaev, Ilya A. | Root, L. O. | Tolbanov, Oleg P. | Ivonin, Ivan V.
Source: Russian physics journal. 2022. Vol. 65, № 6. P. 909-923
Type: статьи в журналах
Date: 2022
Description: The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing ferromagnetic properties, is presented. ... More
Add   Characterization of chromium compensated gaas sensors with the charge-integrating JUNGFRAU readout chip by means of a highly collimated pencil beam
Authors: Greiffenberg, Dominic | Andrä, Marie | Barten, Rebecca | Bergamaschi, Anna | Brückner, Martin | Busca, Paolo | Chiriotti, Sabina | Chsherbakov, Ivan | Dinapoli, Roberto | Fajardo, Pablo | Fröjdh, Erik | Hasanaj, Shqipe | Kozlowski, Pawel | López-Cuenca, Carlos | Lozinskaya, Anastassiya D. | Meyer, Markus | Mezza, Davide | Mozzanica, Aldo | Redford, Sophie | Ruat, Marie | Ruder, Christian | Schmitt, Bernd | Thattil, Dhanya | Tinti, Gemma | Tolbanov, Oleg P. | Tyazhev, Anton V. | Vetter, Seraphin | Zarubin, Andrei N. | Zhang, Jiaguo
Source: Sensors. 2021. Vol. 21, № 4. P. 1550 (1-22)
Type: статьи в журналах
Date: 2021
Description: Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × ... More
Add   Conceptual design report for the LUXE experiment
Authors: Abramowicz, H. | Acosta, U. | Altarelli, M. | Aßmann, R. | Bai, Z. | Behnke, T. | Benhammou, Y. | Blackburn, T. | Boogert, S. | Borysov, O. | Borysova, M. | Brinkmann, R. | Bruschi, M. | Burkart, F. | Büßer, K. | Shaimerdenova, L. | Skakunov, M. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: The European physical journal: Special topics. 2021. Vol. 230, № 11. P. 2445-2560
Type: статьи в журналах
Date: 2021
Description: This Conceptual Design Report describes LUXE (Laser Und XFEL Experiment), an experimental campaign that aims to combine the high-quality and high-energy electron beam of the European XFEL with a power ... More
Add   Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr
Authors: Lozinskaya, Anastassiya D. | Veale, Matthew C. | Kolesnikova, Irina I. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Wheater, R. M. | Zarubin, Andrei N.
Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 2. P. P02026 (1-8)
Type: статьи в журналах
Date: 2021
Description: HR GaAs:Cr is a well known material, used for room-temperature X-ray detector applications. While GaAs:Cr detectors have typically shown good performance at 25oC, there may be benefits of running the ... More
Add   Measurement of the radiation environment of the ATLAS cavern in 2017–2018 with ATLAS-GaAsPix detectors
Authors: Boyko, I. | Burian, P. | Campbell, M. | Chelkov, G. A. | Cherepanova, E. | Di Girolamo, B. | Gongadze, A. | Janecek, J. | Kharchenko, D. | Kruchonak, U. G. | Lapkin, A. | Mora Sierra, Y. | Nessi, M. | Pontecorvo, L. | Pospisil, S. | Rastorguev, D. | Rozhkov, V. | Smolyanskiy, P. I. | Suk, M. | Stekl, I. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 1. P. P01031 (1-13)
Type: статьи в журналах
Date: 2021
Description: A network of ten GaAs:Cr semiconductor Timepix detectors with GaAs:Cr sensors was installed in the ATLAS cavern at CERN's LHC during the shutdown periods 2015–2016 and 2016–2017 in the framework of a ... More
Add   Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes
Authors: Kolesnikova, Irina I. | Kobtsev, Daniil A. | Redkin, Ruslan A. | Voevodin, Vladimir I. | Tyazhev, Anton V. | Tolbanov, Oleg P. | Sarkisov, Yuri S. | Sarkisov, Sergey Yu. | Atuchin, Victor V.
Source: Photonics. 2021. Vol. 8, № 12. P. 575 (1-11)
Type: статьи в журналах
Date: 2021
Description: The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide c ... More
Add   X-ray microbeam characterisation of crystalline defects in small pixel GaAs:Cr detectors
Authors: Wheater, R. M. | Jowitt, L. | Zarubin, A. N. | Richards, S. | Veale, Matthew C. | Wilson, Matthew D. | Fox, O. J. L. | Sawhney, K. J. S. | Lozinskaya, A. D. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2021. Vol. 999. P. 165207 (1-7)
Type: статьи в журналах
Date: 2021
Description: A newly supplied 80 × 80 chromium compensated GaAs sensor with a matrix of 80 × 80 pixels on a 250 m pixel pitch has been characterised utilising microbeam mapping techniques at the Diamond Light Sour ... More
Add   Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip
Authors: Andrä, M. | Barten, R. | Busca, P. | Brückner, M. | Chiriotti Alvarez, S. | Chsherbakov, I. | Dinapoli, R. | Fajardo, P. | Lopez-Cuenca, C. | Lozinskaya, A. D. | Meyer, M. | Mezza, D. | Mozzanica, A. | Redford, S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Greiffenberg, D. | Fröjdh, E. | Bergamaschi, A.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 5. P. P05020 (1-17)
Type: статьи в журналах
Date: 2019
Description: Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise me ... More
Add   The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics
Authors: Chsherbakov, P. | Kolesnikova, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Chsherbakov, I.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 1. P. C01026 (1-7)
Type: статьи в журналах
Date: 2019
Description: In this research the HR-GaAs:Cr sensors noise characteristics were investigated by means of amplitude spectrum analysis. Noise characteristics of HR-GaAs:Cr sensors with different metal contacts were ... More
Add   Charge carrier transport and deep levels recharge in avalanche s-diodes based on GaAs
Authors: Verkholetov, Maksim G. | Koroleva, A. D. | Tolbanov, Oleg P. | Prudaev, Ilya A.
Source: Technical physics letters. 2018. Vol. 44, № 6. P. 465-468
Type: статьи в журналах
Date: 2018
Description: Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n+–π–ν–n structures with the diffusion distribution of deep iron acce ... More
Add   Conductivity of Ga2O3-GaAs heterojunctions
Authors: Kalygina, V. M. | Remizova, I. L. | Tolbanov, Oleg P.
Source: Semiconductors. 2018. Vol. 52, № 2. P. 143-149
Type: статьи в журналах
Date: 2018
Description: The effect of annealing in argon at temperatures of Tan = 700–900°C on the I–V characteristics of metal–Ga2O3–GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga2O3 p ... More
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