Электронная библиотека (репозиторий) Томского государственного университета
фотолюминесценция | Mashanov, Vladimir I.

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Add   Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy
Authors: Timofeev, Vyacheslav F. | Mashanov, Vladimir I. | Azarov, Ivan A. | Loshkarev, Ivan D. | Volodin, Vladimir A. | Gulyaev, Dmitry V. | Chetyrin, Igor A. | Korolkov, Ilya V. | Nikiforov, Alexander I.
Source: Applied surface science. 2020. Vol. 512. P. 145735 (1-7)
Type: статьи в журналах
Date: 2020
Description: SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films
Add   Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst
Authors: Timofeev, V. A. | Mashanov, Vladimir I. | Gavrilova, Tatiana A. | Gulyaev, D. V. | Nikiforov, Alexander I.
Source: Journal of crystal growth. 2019. Vol. 518. P. 103-107
Type: статьи в журналах
Date: 2019
Description: The Sn-rich islands with a Si pedestal on the Si(1 0 0) substrate were obtained by the molecular-beam epitaxy technique. Initially, Sn films of different thicknesses were formed on the Si surface and ... More
Add   Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers
Authors: Nikiforov, Alexander I. | Tuktamyshev, Artur R. | Mashanov, Vladimir I. | Yesin, Michail | Bloshkin, Aleksey A. | Timofeev, Vyacheslav F.
Source: Nanoscale research letters. 2018. Vol. 13. P. 29 (1-8)
Type: статьи в журналах
Date: 2018
Description: The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the ... More
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