Authors: Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich

Source: Journal of communications technology and electronics. 2017. Vol. 62, № 3. P. 314-316

Type: статьи в журналах

Date: 2017

Description: Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches ... More

Authors: Pakhanov, N. A. | Yakimov, A. I. | Voytsekhovskiy, Alexander V. | Pchelyakov, Oleg P.

Source: Optoelectronics, instrumentation and data processing. 2017. Vol. 53, № 2. P. 190-196

Type: статьи в журналах

Date: 2017

Description: This paper demontstrates the possibility of developing a high-voltage waveguide photodetector comprised of Schottky diodes and based on a Au/Ge — Si structure with Ge quantum dots pseudomorphic to a s ... More

Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Voytsekhovskiy, Alexander V.

Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 209-217

Type: статьи в журналах

Date: 2015

Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.

Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177

Type: статьи в журналах

Date: 2014