Электронная библиотека (репозиторий) Томского государственного университета
теллурид кадмия-ртути | Izhnin, Igor I.

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Add   Admittance of barrier nanostructures based on MBE HgCdTe
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 403-409
Type: статьи в журналах
Date: 2022
Description: Mid- and long-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates were fabricated. For mid-wave nBn structures, the composition in the absorbing ... More
Add   Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Korotaev, A. G. | Sidorov, Georgiy Yu.
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Add   Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride
Authors: Fitsych, Olena I. | Świątek, Zbigniew | Morgiel, Y. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Yakushev, Maxim V. | Marin, Denis V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Izhnin, Igor I.
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description: Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op ... More
Add   Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
Authors: Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, D. V. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Mynbaev, Karim D. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G.
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More
Add   Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation
Authors: Grigoryev, Denis V. | Korotaev, A. G. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Izhnin, Igor I. | Savytskyy, Hrygory V. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Voytsekhovskiy, Alexander V. | Varavin, Vasilii S. | Yakushev, Maxim V.
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
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