Электронная библиотека (репозиторий) Томского государственного университета
молекулярно-лучевая эпитаксия | Korotaev, A. G. | Savytskyy, Hrygory V.

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Add   TEM studies of structural defects in HgTe/HgCdTe quantum wells
Authors: Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Y. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Fitsych, Olena I. | Varavin, Vasilii S.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description: Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular ... More
Add   Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Fitsych, Olena I. | Savytskyy, Hrygory V. | Świątek, Zbigniew
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Add   Properties of arsenic-implanted Hg1-xCdxTe MBE films
Authors: Izhnin, Igor I. | Korotaev, A. G. | Fitsych, Olena I. | Bonchyk, Oleksandr Yu. | Savytskyy, Hrygory V. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V. | Jakiela, Rafal | Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description: Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical ... More
Add   Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
Authors: Lyapunov, D. V. | Grigoryev, Denis V. | Korotaev, A. G. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Iznin, I. I. | Savytskyy, Hrygory V. | Bonchik, A. U. | Dvoretsky, Sergei A. | Pishchagin, Anton A. | Mikhailov, Nikolay N.
Source: Journal of Physics: Conference Series. 2016. Vol. 741. P. 012097 (1-5)
Type: статьи в журналах
Date: 2016
Description: In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe ... More
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