Authors: Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, D. V. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Mynbaev, Karim D. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G.

Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)

Type: статьи в журналах

Date: 2019

Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More

Authors: Izhnin, Igor I. | Syvorotka, I. I. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.

Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354

Type: статьи в сборниках

Date: 2018