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Source: Physica scripta. 2023. Vol. 98, № 6. P. 065907
Type: статьи в журналах
Date: 2023
Description:
This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). S
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Source: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Type: статьи в журналах
Date: 2016
Description:
This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − xCdxTe grown by molecular beam epitaxy. The structure contains a single quantum
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