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Source: Physics of the solid state. 2018. Vol. 60, № 9. P. 1686-1690
Type: статьи в журналах
Date: 2018
Description:
Using methods of the density functional theory, the electronic band structure of a hexagonal modification of the layered GaTe semiconductor has been calculated. The structural parameters of a bulk cry
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Authors:
Korotchenko, Zoya V. |
Kurasova, A. S. |
Sarkisov, Sergey Yu. |
Sarkisov, Yuri S. |
Chernyshov, A. I. |
Korolkov, I. V. |
Kuchumov, B. M. |
Saprykin, Anatoly I. |
Atuchin, Victor V. |
Bereznaya, Svetlana A.
Source: Russian physics journal. 2018. Vol. 61, № 1. P. 191-195
Type: статьи в журналах
Date: 2018
Description:
A procedure for the synthesis of a CdSiP2 compound from the initial elementary components in a gradient thermal field has been developed. The phase and chemical composition of the synthesized and recr
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