Электронная библиотека (репозиторий) Томского государственного университета
2017 | Voytsekhovskiy, Alexander V. | Dvoretsky, Sergei A. | Korotaev, A. G.

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Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012083 (1-6)
Type: статьи в журналах
Date: 2017
Description: In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantati ... More
Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012082 (1-4)
Type: статьи в журналах
Date: 2017
Description: The effect of a high-frequency nanosecond volume discharge forming in an inhomogeneous electrical field at atmospheric pressure on the CdHgTe (CMT) epitaxial films is studied. The measurement of the e ... More
Source: Infrared physics and technology. 2017. Vol. 81. P. 52-58
Type: статьи в журналах
Date: 2017
Description: A defect study was performed on arsenic-implanted Hg1-xCdxTe (x = 0.23–0.30) films with graded-gap surface layers, grown with molecular-beam epitaxy on GaAs and Si substrates and designed for fabricat ... More
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description: Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical ... More
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