Authors: Budnitsky, D. | Lozinskaya, A. D. | Kolesnikova, I. | Zarubin, A. N. | Shemeryankina, A. | Mikhailov, T. | Skakunov, M. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Novikov, Vladimir A.

Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)

Type: статьи в журналах

Date: 2017

Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More

Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.

Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)

Type: статьи в журналах

Date: 2017

Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More

Authors: Timofeev, V. A. | Kokhanenko, Andrey P. | Tuktamyshev, A. R. | Mashanov, V. I. | Loshkarev, I. D. | Novikov, Vladimir A. | Nikiforov, A. I.

Source: Russian physics journal. 2017. Vol. 60, № 2. P. 354-359

Type: статьи в журналах

Date: 2017

Description: Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn fi ... More