Электронная библиотека (репозиторий) Томского государственного университета
2015 | Zarubin, A. N.

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Add   Dependence of X-ray sensitivity of GaAs:Cr sensors on material of contacts
Authors: Lozinskaya, A. D. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Yaskevich, T. M. | Zarubin, A. N. | Novikov, Vladimir A.
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01020 (1-5)
Type: статьи в журналах
Date: 2015
Description: The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. So ... More
Add   Influence of split-ring resonators on the terahertz transmission of a planar waveguide
Authors: Nazarov, Maxim M. | Sarkisov, Sergey Yu. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N.
Source: Russian physics journal. 2015. Vol. 58, № 4. P. 562-566
Type: статьи в журналах
Date: 2015
Description: Terahertz transmission spectra of subwavelength split-ring resonator structures on ceramic substrates are investigated experimentally. For terahertz wave propagation along the ring resonators used as ... More
Add   SI-GaAs photoconductive dipole antennas for terahertz generation: the influence of antenna length and shape
Authors: Sarkisov, Sergey Yu. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Skakunov, M. S.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 1. С. 455-456
Type: статьи в сборниках
Date: 2015
Add   Transmission spectra and generation of terahertz pulses in SiO2-GaSe, TiO2-GaSe, Ga2O3-GaSe and GaSe:S structures
Authors: Bereznaya, Svetlana A. | Korotchenko, Zoya V. | Prudaev, Ilya A. | Redkin, R. A. | Sarkisov, Sergey Yu. | Tolbanov, Oleg P. | Zarubin, A. N.
Source: Russian physics journal. 2015. Vol. 58, № 8. P. 1181-1185
Type: статьи в журналах
Date: 2015
Description: Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and ... More
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