Электронная библиотека (репозиторий) Томского государственного университета
2015 | Ayzenshtat, G. I.

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Add   A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes
Authors: Ayzenshtat, G. I. | Yushchenko, A. Yu.
Source: Instruments and experimental techniques. 2015. Vol. 58, № 2. P. 107-110
Type: статьи в журналах
Date: 2015
Description: It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion leng ... More
Add   Transient processes in the GaAs-based microwave-pin-diodes
Authors: Ayzenshtat, G. I. | Yushchenko, A. Yu. | Bozhkov, V. G.
Source: Russian physics journal. 2015. Vol. 57, № 12. P. 1627-1633
Type: статьи в журналах
Date: 2015
Description: The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resultin ... More
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