Электронная библиотека (репозиторий) Томского государственного университета
Zarubin, A. N. | Tolbanov, Oleg P.

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Add   X-ray microbeam characterisation of crystalline defects in small pixel GaAs:Cr detectors
Authors: Wheater, R. M. | Jowitt, L. | Zarubin, A. N. | Richards, S. | Veale, Matthew C. | Wilson, Matthew D. | Fox, O. J. L. | Sawhney, K. J. S. | Lozinskaya, A. D. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2021. Vol. 999. P. 165207 (1-7)
Type: статьи в журналах
Date: 2021
Description: A newly supplied 80 × 80 chromium compensated GaAs sensor with a matrix of 80 × 80 pixels on a 250 m pixel pitch has been characterised utilising microbeam mapping techniques at the Diamond Light Sour ... More
Add   Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip
Authors: Andrä, M. | Barten, R. | Busca, P. | Brückner, M. | Chiriotti Alvarez, S. | Chsherbakov, I. | Dinapoli, R. | Fajardo, P. | Lopez-Cuenca, C. | Lozinskaya, A. D. | Meyer, M. | Mezza, D. | Mozzanica, A. | Redford, S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Greiffenberg, D. | Fröjdh, E. | Bergamaschi, A.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 5. P. P05020 (1-17)
Type: статьи в журналах
Date: 2019
Description: Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise me ... More
Add   The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics
Authors: Chsherbakov, P. | Kolesnikova, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Chsherbakov, I.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 1. P. C01026 (1-7)
Type: статьи в журналах
Date: 2019
Description: In this research the HR-GaAs:Cr sensors noise characteristics were investigated by means of amplitude spectrum analysis. Noise characteristics of HR-GaAs:Cr sensors with different metal contacts were ... More
Add   GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis
Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, V. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.
Source: Journal of instrumentation : electronic journal. 2018. Vol. 13, № 1. P. C01030 (1-7)
Type: статьи в журналах
Date: 2018
Description: The investigation results of GaAs:Cr X-ray sensor noise characteristics are presented. Measured samples were 3*3 mm2 and thickness in the range of 300–500 μm. It is shown that the proposed method can ... More
Add   Characterization of 4 inch GaAs:Cr wafers
Authors: Budnitsky, D. | Lozinskaya, A. D. | Kolesnikova, I. | Zarubin, A. N. | Shemeryankina, A. | Mikhailov, T. | Skakunov, M. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Novikov, Vladimir A.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
Add   Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers
Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
Add   Dependence of X-ray sensitivity of GaAs:Cr sensors on material of contacts
Authors: Lozinskaya, A. D. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Yaskevich, T. M. | Zarubin, A. N. | Novikov, Vladimir A.
Source: Journal of instrumentation : electronic journal. 2015. Vol. 10, № 1. P. C01020 (1-5)
Type: статьи в журналах
Date: 2015
Description: The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. So ... More
Add   Influence of split-ring resonators on the terahertz transmission of a planar waveguide
Authors: Nazarov, Maxim M. | Sarkisov, Sergey Yu. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N.
Source: Russian physics journal. 2015. Vol. 58, № 4. P. 562-566
Type: статьи в журналах
Date: 2015
Description: Terahertz transmission spectra of subwavelength split-ring resonator structures on ceramic substrates are investigated experimentally. For terahertz wave propagation along the ring resonators used as ... More
Add   SI-GaAs photoconductive dipole antennas for terahertz generation: the influence of antenna length and shape
Authors: Sarkisov, Sergey Yu. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Skakunov, M. S.
Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т.. М. [и др.], 2015. Т. 1. С. 455-456
Type: статьи в сборниках
Date: 2015
Add   Transmission spectra and generation of terahertz pulses in SiO2-GaSe, TiO2-GaSe, Ga2O3-GaSe and GaSe:S structures
Authors: Bereznaya, Svetlana A. | Korotchenko, Zoya V. | Prudaev, Ilya A. | Redkin, R. A. | Sarkisov, Sergey Yu. | Tolbanov, Oleg P. | Zarubin, A. N.
Source: Russian physics journal. 2015. Vol. 58, № 8. P. 1181-1185
Type: статьи в журналах
Date: 2015
Description: Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and ... More
Add   Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging
Authors: Bell, Steven J. | Duarte, Diana D. | French, M. J. | Schneider, Andreas | Seller, Paul H. | Wilson, Matthew D. | Lozinskaya, A. D. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Veale, Matthew C.
Source: Nuclear instruments and methods in physics research A. 2014. Vol. 752. P. 6-14
Type: статьи в журналах
Date: 2014
Add   Electrical characteristics of n-GaAs-anode film-Ga2O3-metal structures
Authors: Valiev, K. I. | Zarubin, A. N. | Petrova, Yu. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Yaskevich, T. M. | Kalygina, V. M.
Source: Semiconductors. 2012. Vol. 46, № 8. P. 1003-1007
Type: статьи в журналах
Date: 2012
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