Электронная библиотека (репозиторий) Томского государственного университета
Sambonsuge, Shota

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Source: Nanoscale research letters. 2015. Vol. 10. P. 421 (1-6)
Type: статьи в журналах
Date: 2015
Description: Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni
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