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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1911-1916
Type: статьи в журналах
Date: 2018
Description:
The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the
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Source: Chinese journal of physics. 2017. Vol. 55, № 1. P. 59-63
Type: статьи в журналах
Date: 2017
Description:
The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at tempe
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Source: The international workshop on UV materials and devices, July 27-31, 2016, Beijing, China. [S. l.], 2016. P. 88-89
Type: статьи в сборниках
Date: 2016
Source: The international workshop on UV materials and devices, July 27-31, 2016, Beijing, China. [S. l.], 2016. P. 90-91
Type: статьи в сборниках
Date: 2016
Source: XV Международная молодежная конференция по люминесценции и лазерной физике, село Аршан, Республика Бурятия, Россия, 18-24 июля 2016 г. : тезисы лекций и докладов. Иркутск, 2016. С. 7
Type: статьи в сборниках
Date: 2016
Source: International Siberian Conference on Control and Communications (SIBCON–2015), Russia, Omsk, may 21-23, 2015 : proceedings. Omsk, 2015. P. [1-5]
Type: статьи в сборниках
Date: 2015
Description:
The influence of annealing of titanium oxide films on the currents of metal-TiO2-n-Si structures was investigated. It has been shown that regardless of the annealing temperature the conductivity of st
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Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Barnaul, 2015. P. 181-182
Type: статьи в сборниках
Date: 2015
Source: Semiconductors. 2015. Vol. 49, № 8. P. 1012-1018
Type: статьи в журналах
Date: 2015
Description:
The effects of thermal annealing and exposure to oxygen plasma on the electrical and photoelectric properties of metal-TiO2-Si structures are investigated. The TiO2 films are fabricated by the rf magn
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Source: Semiconductors. 2015. Vol. 49, № 3. P. 345-351
Type: статьи в журналах
Date: 2015
Description:
We investigate the effect of thermal annealing in argon and of oxygen plasma processing on the photoelectric properties of GaAs-Ga2O3-Me structures. Gallium-oxide films are fabricated by photostimulat
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Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Barnaul, 2015. P. 180-181
Type: статьи в сборниках
Date: 2015
Source: Effect of external influences on the strength and plasticity of metals and alloys : book of the International workshop articles, Russia-China, 15-20 September, 2015 [Barnaul-Belokurikha]. Barnaul, 2015. P. 183-184
Type: статьи в сборниках
Date: 2015
Source: International Siberian Conference on Control and Communications (SIBCON–2015), Russia, Omsk, may 21-23, 2015 : proceedings. Omsk, 2015. P. [1-4]
Type: статьи в сборниках
Date: 2015
Source: International Siberian Conference on Control and Communications (SIBCON–2015), Russia, Omsk, may 21-23, 2015 : proceedings. Omsk, 2015. P. [1-5]
Type: статьи в сборниках
Date: 2015
Source: International Workshop on Gallium Oxide and Related Materials 2015 (IWGO 2015), 3-6, November 2015, Kyoto University, Kyoto, Japan. Kyoto, 2015. P. 100-101
Type: статьи в сборниках
Date: 2015
