Электронная библиотека (репозиторий) Томского государственного университета
Kokhanenko, Andrey P.

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Source: Inorganics. 2023. Vol. 11, № 7. P. 303 (1-15)
Type: статьи в журналах
Date: 2023
Description: In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, andwidth ... More
Source: Nanomaterials. 2023. Vol. 13, № 2. P. 231 (1-12)
Type: статьи в журналах
Date: 2023
Description: This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences o ... More
Source: Nanotechnology. 2022. Vol. 33, № 11. P. 115603 (1-8)
Type: статьи в журналах
Date: 2022
Description: In this paper, we analyze superstructural transitions during epitaxial growth of two-dimensional layers and the formation of quantum dots by the Stranski–Krastanov mechanism in elastically stressed sy ... More
Source: Nanomaterials. 2022. Vol. 12, № 13. P. 2221 (1-21)
Type: статьи в журналах
Date: 2022
Description: Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, ... More
Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 253-263
Type: статьи в журналах
Date: 2022
Description: Today there are several types of photodetectors that can cope with the task of detecting a single photon, however, avalanche photodiodes are most widely used for applications in fiber-optic communicat ... More
Source: Russian physics journal. 2022. Vol. 64, № 9. P. 1583-1591
Type: статьи в журналах
Date: 2022
Description: Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional cryst ... More
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 19-20
Type: статьи в сборниках
Date: 2021
Description: Since the demonstration of molecular beam epitaxy which widened the ability to establish more applications based on semiconductor materials, and after the big success of quantum well structures for in ... More
Source: Journal of Physics: Conference Series. 2021. Vol. 1954. P. 012024 (1-4)
Type: статьи в журналах
Date: 2021
Description: The microstructure and properties of a silicon coating on a titanium nickelide substrate were studied to assess the possibility of using such a coating to improve the biocompatibility of medical impla ... More
Source: Proceedings of SPIE. 2021. Vol. 12086 : XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation. P. 120861X-1-120861X-7
Type: статьи в журналах
Date: 2021
Description: This paper reports results of a theoretical study of multilayer Ge/Si infrared photodetector parameters calculations, these calculations are of certain characteristics of detectors such as: dark curre ... More
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 43-
Type: статьи в сборниках
Date: 2021
Description: Graphene-like allotrope modifications of single elements, such as borophene (B), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosporene (P), arsenene (As), antimonene (Sb), bismuthene ... More
Source: Актуальные проблемы радиофизики АПР-2021 : 9-я Международная научно-практическая конференция, 20-22 октября 2021 года, г. Томск : сборник трудов конференции. Томск, 2021. С. 223-224
Type: статьи в сборниках
Date: 2021
Description: The work discusses multilayer infrared photodetectors with quantum dots of germanium on silicon. It compares the theoretical calculations results of the dark current density of multilayer photodetecto ... More
Source: Journal of Physics: Conference Series. 2020. Vol. 1482. P. 012010 (1-5)
Type: статьи в журналах
Date: 2020
Description: In this paper, we consider the 7x7 to 5x5 superstructure transition during the synthesis of Ge epitaxial layers on a Si (111) surface in its temperature range from 250 to 700 °C. This transition is in ... More
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533
Type: статьи в журналах
Date: 2020
Description: In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kineti ... More
Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)
Type: статьи в журналах
Date: 2020
Description: Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered
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