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Source: Russian physics journal. 2018. Vol. 61, № 1. P. 187-190
Type: статьи в журналах
Date: 2018
Description:
The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coeffi
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Source: Physica status solidi A : applications and materials science. 2018. Vol. 215, № 8. P. 1700445 (1-5)
Type: статьи в журналах
Date: 2018
Description:
Red and yellow AlGaInP/GaAs light‐emitting diodes (LEDs) with multiple quantum wells grown by the metalorganic chemical vapor deposition technique were irradiated at room temperature by 10 MeV electro
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Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1604-1608
Type: статьи в журналах
Date: 2015
Description:
The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are
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