Электронная библиотека (репозиторий) Томского государственного университета
Atuchin, Victor V. | статьи в журналах | Mukherjee, Shaibal

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Add   Kinetics and mechanism of BaLaCuS3 oxidation
Authors: Azarapin, Nikita O. | Khritokhin, Nikolay A. | Atuchin, Victor V. | Gubin, Alexey A. | Molokeev, Maxim S. | Mukherjee, Shaibal | Andreev, Oleg V.
Source: Crystals. 2023. Vol. 13, № 6. P. 903 (1-15)
Type: статьи в журналах
Date: 2023
Description: The oxidation reactions of BaLaCuS3 in the artificial air atmosphere were studied at different heating rates in the temperature range of 50–1200 °C. The oxidation stages were determined by DSC-TG, XRD ... More
Add   Insights into the sputter-instigated valence plasmon oscillations in CIGSe thin films
Authors: Garg, Vivek | Sengar, Brajendra S. | Siddharth, Gaurav | Kumar, Shailendra | Atuchin, Victor V. | Mukherjee, Shaibal
Source: Surfaces and interfaces. 2021. Vol. 25. P. 101146 (1-7)
Type: статьи в журналах
Date: 2021
Description: We report a unique methodology of triggering plasmonic excitations in sputtered ultrathin CIGSe films. In this approach of plasmonic excitation, secondary ion source present in the growth system insti ... More
Add   Band alignment of Cd-free (Zn, Mg)O layer with Cu2ZnSn(S,Se)4 and its effect on the photovoltaic properties
Authors: Garg, Vivek | Kumar, Amitesh | Awasthi, Vishnu | Kumar, Shailendra | Atuchin, Victor V. | Mukherjee, Shaibal | Sengar, Brajendra S
Source: Optical materials. 2018. Vol. 84. P. 748-756
Type: статьи в журналах
Date: 2018
Description: Cu2ZnSn(S,Se)4 (CZTSSe) is an interesting absorber material for thin film solar cells. However, one of the key challenges for the kesterite-based solar cells is to improve the open-circuit voltage (Vo ... More
Add   Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: a case study of GZO
Authors: Sengar, Brajendra S. | Awasthi, Vishnu | Kumar, Amitesh | Singh, Rohit | Kumar, Shailendra | Mukherjee, C. | Atuchin, Victor V. | Mukherjee, Shaibal | Garg, Vivek
Source: ACS Applied materials & interfaces. 2018. Vol. 10, № 6. P. 5464-5474
Type: статьи в журналах
Date: 2018
Description: The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wi ... More
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