Электронная библиотека (репозиторий) Томского государственного университета
2016 | полупроводники

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Source: Semiconductors. 2016. Vol. 50, № 2. P. 171-179
Type: статьи в журналах
Date: 2016
Description: Halogen (F, Cl, Br, and I) adsorption at an As-stabilized GaAs (001) surface with the β2–(2 × 4) reconstruction is studied using the plane-wave projected-augmented wave method. The effect of halogens ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)
Type: статьи в журналах
Date: 2016
Description: We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an ... More
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