Электронная библиотека (репозиторий) Томского государственного университета
Izhnin, Igor I.

Add to Quick Collection   All 5 Results

Showing items 1 - 5 of 5.
  • «
  • ←
  • 1
  • →
  • »
Sort:
 Add All Items to Quick Collection
Add   Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum analysis methods
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.
Source: Russian physics journal. 2023. Vol. 65, № 9. P. 1538-1554
Type: статьи в журналах
Date: 2023
Description: The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in ... More
Add   Determination of the parameters of multi-carrier spectrum in CdHgTe. II. Discrete mobility spectrum analysis
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.
Source: Russian physics journal. 2023. Vol. 65, № 10. P. 1716-1731
Type: статьи в журналах
Date: 2023
Description: The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of c ... More
Add   Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy
Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu. | Yakushev, Maxim V.
Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract book. Kiev, 2021. P. 44-
Type: статьи в сборниках
Date: 2021
Description: The use of unipolar barrier architectures in infrared detectors based on HgCdTe grown by molecular beam epitaxy (MBE) provides significant technological advantages. Earlier, the authors of the manuscr ... More
Add   Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis
Authors: Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Izhnin, Igor I.
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More
Add   Properties of arsenic-implanted Hg1-xCdxTe MBE films
Authors: Izhnin, Igor I. | Korotaev, A. G. | Fitsych, Olena I. | Bonchyk, Oleksandr Yu. | Savytskyy, Hrygory V. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V. | Jakiela, Rafal | Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description: Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical ... More
  • «
  • ←
  • 1
  • →
  • »
^