Authors: Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Gorn, Dmitriy Igorevich | Kashirskii, Danila E. | Lozovoy, Kirill A. | Dirko, Vladimir V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Sidorov, Georgiy Yu.

Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 112-113

Type: статьи в сборниках

Date: 2021

Description: One of the topical areas of solid state photoelectronics is the creation of infrared detectors based on unipolar barrier systems (for example, with an nBn architecture). The greatest progress has been ... More

Authors: Novikov, Vadim A. | Bezrodnyy, Dmitriy A. | Voytsekhovskiy, Alexander V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Grigoryev, Denis V.

Source: Journal of electronic materials. 2017. Vol. 46, № 7. P. 4435-4438

Type: статьи в журналах

Date: 2017

Description: The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In t ... More

Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Vasilev, Vladimir V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Nesmelov, Sergey N.

Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241

Type: статьи в журналах

Date: 2015

Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, Olena I. | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A. | Mynbaev, Karim D.

Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207

Type: статьи в журналах

Date: 2015

Description: Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto ... More

Authors: Novikov, Vadim A. | Bezrodnyy, Dmitriy A. | Voytsekhovskiy, Alexander V. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Grigoryev, Denis V.

Source: 17th International Conference on II-VI Compounds and Related Materials, Paris, 13-18 September 2015 : conference book. [S. l.], 2015. P. 345

Type: статьи в сборниках

Date: 2015

Authors: Grigoryev, Denis V. | Bezrodnyy, Dmitriy A. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Dvoretsky, Sergei A. | Novikov, Vadim A.

Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100S-1-98100S-6

Type: статьи в журналах

Date: 2015

Description: In the present report we studied the distribution of surface potential of the HgCdTe epitaxial films grown by molecular beam epitaxy after the impact of picosecond electron beam and volume discharge i ... More

Authors: Grigoryev, Denis V. | Lozovoy, Kirill A. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A. | Dvoretsky, Sergei A. | Voytsekhovskiy, Alexander V.

Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6

Type: статьи в журналах

Date: 2015

Description: The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, G. V. | Mynbaev, Karim D. | Fitsych, Olena I.

Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165

Type: статьи в журналах

Date: 2015

Description: Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri ... More

Authors: Pociask-Bialy, M. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Dvoretsky, Sergei A. | Mikhailov, N. N. | Yakushev, M. V. | Mynbaev, K. D. | Izhnin, I. I.

Source: Opto-electronics review. 2013. Vol. 23, № 3. P. 200-207

Type: статьи в сборниках

Date: 2014

Authors: Dvoretsky, Sergei A. | Mynbaev, Karim D. | Fitsych, Olena I. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V. | Sheregii, E. | Izhnin, Igor I.

Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7

Type: статьи в журналах

Date: 2014

Authors: Novikov, Vadim A. | Bezrodnyy, Dmitriy A. | Dvoretsky, Sergei A. | Grigoryev, Denis V.

Source: Applied physics letters. 2014. Vol. 105, № 10. P. 102107-1-102107-4

Type: статьи в журналах

Date: 2014

Authors: Mynbaev, K. D. | Bazhenov, N. L. | Izhnin, A. I. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Shilyaev, A. V.

Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118

Type: статьи в журналах

Date: 2014

Authors: Izhnin, A. I. | Mynbaev, Karim D. | Bazhenov, N. L. | Shilyaev, A. V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Izhnin, Igor I.

Source: Opto-electronics review. 2013. Vol. 21, № 4. P. 390-394

Type: статьи в журналах

Date: 2013